Microstructure and electrical properties of MgO-doped SnO2 varistor ceramics

The effect of MgO addition on the properties of (Co, Nb, Cr)-doped SnO2 varistors was investigated. The samples with different MgO concentrations were fabricated by the conventional ceramic method and sintered at 1,250, 1,300, 1,350 and 1,400 °C for 2 h. It was found that the nonlinear coefficient presented a peak value of 28 and lowest leakage current density of 7 μA/cm2 when 0.5 mol% MgO was added. The breakdown electrical field increased from 174 to 531 V/mm with increasing MgO from 0.0 to 2.0 mol%. The relative dielectric constant decreased with increasing MgO from 0.0 to 0.5 mol%, but increased with more MgO added. The dielectric loss decreased obviously in the case of low frequency with MgO added, and it had the lowest value when 0.5 mol% MgO added. The optimal samples were obtained by doping MgO with 0.5 mol% and sintering at 1,350 °C.