Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface

The p-n junctions promising for photoconverters have been fabricated using diffusion from the gaseous phase and studied with the analysis of mass transport of the doping impurity (Zn) through the microprofile GaAs surface taken into account. Depending on the conditions of diffusion (the diffusant’s mass and diffusion duration), the formation of both a p-n junction in a microprofile and a planar p-n junction in the GaAs bulk with a heavily doped near-surface p+ type layer is possible. Photoelectric characteristics of device structures with textured p-n junction and a thin wide-gap AlxGa1 − xAs window obtained by liquid-phase epitaxy are reported.