Mathematical modeling of radial impurity distribution in crystals grown under laminar convection conditions

被引：0
|
作者：
N. A. Baldina
B. V. Vasekin
V. A. Goncharov
机构：
[1] Moscow State Institute of Electronic Technology,
来源：
Theoretical Foundations of Chemical Engineering | 2009年 / 43卷
关键词：
Antimony; Diffusion Layer; Diffusion Boundary; Convective Cell; Space Experiment;
D O I：
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学科分类号：
摘要：
A mathematical model of the process of the growth of semiconductor crystals by the Bridgman method is developed. In modeling of a known space experiment, the character of convective flows and their influence on the of the axial and radial impurity distribution during the growth of a crystal are studied. As a result of numerical calculations, the possibility of formation of the large radial nonuniformity of the impurity distribution observed in a number of space experiments is shown.
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页码：353 / 360
页数：7
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