Thermoelectric properties of Bi-doped Mg2Si1−xSnx prepared by mechanical alloying

被引：0
|
作者：
Sin-Wook You
Il-Ho Kim
Soon-Mok Choi
Won-Seon Seo
机构：
[1] Korea National University of Transportation,Department of Materials Science and Engineering
[2] Korea University of Technology and Education,School of Energy, Materials and Chemical Engineering
[3] Korea Institute of Ceramic Engineering and Technology,Energy and Environmental Materials Division
来源：
Journal of the Korean Physical Society | 2013年 / 63卷
关键词：
Thermoelectric; Mg; (Si,Sn); Solid solution; Mechanical alloying;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Bi-doped Mg2Si1−xSnx solid solutions were prepared by mechanical alloying and hot pressing. The lattice constant increased and the electrical conduction behavior changed from n-type to p-type with increasing Sn content. The electrical conductivity increased with increasing Sn content at a specific temperature. Bi-doped Mg2Si1−xSnx solid solutions showed n-type conduction, and the carrier concentration was increased because of doped Bi acting as donors. The absolute value of the Seebeck coefficient decreased with increasing temperature. The lowest thermal conductivity of 1.3–1.5 W/mK was obtained by Bi doping. Mg2Si0.7Sn0.3:Bi0.01 exhibited a maximum figure of merit (ZT) of 0.65 at 823 K.
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收藏
页码：2153 / 2157
页数：4
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