Diode-pumped Nd:YVO4 and Nd:KGd(WO4)2 1.3 μm lasers passively Q-switched with PbS-doped glass

被引：0
|
作者：
V.G. Savitski
A.M. Malyarevich
K.V. Yumashev
B.D. Sinclair
A.A. Lipovskii
机构：
[1] International Laser Center,
[2] bldg. 17,undefined
[3] #65 F. Skaryna Ave.,undefined
[4] 220027 Minsk,undefined
[5] Belarus,undefined
[6] J.F. Allen Research Laboratories,undefined
[7] School of Physics and Astronomy,undefined
[8] University of St. Andrews,undefined
[9] St. Andrews,undefined
[10] Scotland,undefined
[11] KY16 9SS,undefined
[12] UK,undefined
[13] St.-Petersburg State Technical University,undefined
[14] 195251,undefined
[15] St.-Petersburg,undefined
[16] Russia,undefined
来源：
Applied Physics B | 2003年 / 76卷
关键词：
PACS: 42.60.Gd; 42.55.Xi; 42.70.Hj;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Diode-pumped Nd:YVO4 and Nd:KGW lasers passively Q-switched with PbS-quantum dot-doped phosphate glass were demonstrated. For the Nd:YVO4 laser, pulses 110 ns in duration with a 13% Q-switching efficiency were obtained. The absorption recovery time of the PbS-doped glass was measured to be 27±4 ps. Some recommendations for more efficient use of PbS-doped glasses for Q-switching of diode-pumped lasers are suggested on the basis of our analysis.
引用
收藏
页码：253 / 256
页数：3
相关论文
共 50 条
  • [31] Passive Q -: Switched, CW diode pumped nd -: Doped YAG and YVO4 lasers
    Kalisky, Y
    Levy, S
    Kravchik, L
    LASER MATERIAL CRYSTAL GROWTH AND NONLINEAR MATERIALS AND DEVICES, 1999, 3610 : 109 - 113
  • [32] Diode-pumped passively mode-locked composite Nd:YVO4/Nd:YVO4/Nd:YVO4 laser with a SESAM
    Wang, X. M.
    Li, G. Q.
    Zhao, S. Z.
    Li, S. X.
    Zhang, L.
    Guo, Y. J.
    LASER PHYSICS, 2015, 25 (09)
  • [33] Diode-Pumped Actively Q-Switched Nd:YVO4/RTP Intracavity Raman Laser at 1.49 μm
    Jiao, Yue
    Liu, Zhaojun
    Zhang, Xingyu
    Gao, Feilong
    Jia, Chenyang
    Chen, Xiaohan
    Cong, Zhenhua
    CRYSTALS, 2019, 9 (03):
  • [34] KLu(WO4)2crystal as the Raman medium in a diode-pumped passively Q-switched Nd:YAG laser
    Hui-hua Xu
    Xing-yu Zhang
    Qing-pu Wang
    Zhen-hua Cong
    Cong Wang
    Wei-tao Wang
    Lei Li
    Zhao-jun Liu
    Xiao-han Chen
    Shu-zhen Fan
    Jian-li He
    Huai-jin Zhang
    Optoelectronics Letters, 2012, 8 (5) : 321 - 324
  • [35] Passively Q-switched diode-pumped Nd:YVO4/Cr4+:YAG single-frequency microchip laser
    Chen, YF
    Huang, TM
    Wang, CL
    ELECTRONICS LETTERS, 1997, 33 (22) : 1880 - 1881
  • [36] Passively Q-switched diode-pumped Nd:YVO4/Cr4+:YAG single-frequency microchip laser
    Chen, Y.F.
    Huang, T.M.
    Wang, C.L.
    1880, IEE, Stevenage, United Kingdom (33)
  • [37] Diode-pumped passively Q-switched Nd:GdVO4 lasers operating at 1.06 μm wavelength
    C. Li
    J. Song
    D. Shen
    N.S. Kim
    J. Lu
    K. Ueda
    Applied Physics B, 2000, 70 : 471 - 474
  • [38] Diode-pumped passively Q-switched Nd:GdVO4 lasers operating at 1.06 μm wavelength
    Li, C
    Song, J
    Shen, D
    Kim, NS
    Lu, J
    Ueda, K
    APPLIED PHYSICS B-LASERS AND OPTICS, 2000, 70 (04): : 471 - 474
  • [39] Diode-end-pumped passively Q-switched Nd:YAP/YVO4 Raman laser at 1.2 μm
    Zhang Li
    Zhu Hai-Yong
    Sun Ying-Lu
    Duan Yan-Min
    Qi Zi-Qin
    Ruan Xiu-Kai
    Cheng Meng-Yao
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2020, 39 (06) : 786 - 790
  • [40] Single frequency diode pumped Q-switched Nd:YVO4 laser
    Jabczynski, JK
    Zendzian, W
    Skorczakowski, M
    Mierczyk, Z
    Jankiewicz, Z
    OPTICAL VELOCIMETRY, 1996, 2729 : 37 - 41
12345