Dependence of the ion sputtering rate on the light-induced change in the work function of heterophase semiconductors

Photoconducting polycrystalline CdS-PbS heterophase semiconductor films have been studied by secondary-ion mass spectrometry (SIMS). The SIMS measurements were performed on samples illuminated with white light at various intensities. The observed dependence of the relative yield of positive secondary ions on the luminance is analytically described and theoretically explained in terms of the light-induced change in the work function of the semiconductor.