共 50 条
- [21] Properties of freestanding GaN substrates grown by hydride vapor phase epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (1AB): : L13 - L15
- [23] Behavior of GaN nanoneedles grown by using hydride vapor phase epitaxy for different growth times Journal of the Korean Physical Society, 2015, 66 : 1270 - 1274
- [29] Structural characterization of thick GaN films grown by hydride vapor phase epitaxy III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 245 - 250