A review on future novel interconnect and polymeric materials for cryogenic memory packaging

被引:0
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作者
C. L. Gan
Chen Yu Huang
Yung Sheng Zou
Min Hua Chung
Hem Takiar
机构
[1] Micron Memory Taiwan Co. Ltd,
[2] Micron Technology Inc,undefined
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摘要
With the recent innovation of Open Artificial Intelligence, ChatGPT deployment as well as decarbonizing aviation such as future electric and hybrid flight, these increased applications have triggered the growth of data center infrastructure as processing, storage, and communication system in the digital world. The data center itself has contributed 1.5% to the total world electricity consumption and this is expected to increase with time. One of the problems faced by these centers over the years is the cooling of the information technology components. This paper discusses some of those key literature reviews of interconnect materials (solder alloys, solder behavior especially in its ductile to brittle transition temperature), polymers under cryogenic conditions, future encapsulants and high-entropy alloys for mitigation strategies of prevention of those associated brittle fracture mode at cryogenic temperature. Key long-term challenges for enabling memory device packing for deployment in quantum computing are covered at the end of this paper.
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