Comparison of anti-reflective properties of single layer anatase and rutile TiO2 on GaAs based solar cells

Anatase and rutile titanium dioxide thin films grown by a low temperature process are investigated for their use as a single layer antireflection coating for GaAs solar cells. The thin films are obtained by spin coating a layer from the TiO2 sol-gel and subsequently annealing at 150 °C. The sol-gel is synthesized by the hydrolysis of titanium isopropoxide in the presence of an acid or a base. By controlling the pH of the sol-gel during growth, pure anatase and rutile phases are obtained. A pH of around 3.0 yields anatase phase while a pH of 9.0 yields pure rutile phase TiO2. The two different phases of TiO2 are characterized by measuring the Raman scattering spectra. The optical constants, thickness and reflectance of the thin films on GaAs are obtained using a spectroscopic ellipsometer. The sol-gel is spin coated on GaAs based solar cells and annealed at 150 °C to form the anti-reflective layer. The performance of the solar cells is evaluated before and after coating with the TiO2 films. The anatase TiO2 anti-reflective films performed better than the rutile with a maximum power conversion efficiency enhancement of 50%. Quantum efficiency enhancement of 58% and 25% are obtained with anatase and rutile phase films respectively. The performance enhancement of the solar cells using these thin films can be attributed to the destructive interference of light associated with a single layer coating on the solar cell surface.