Characterization of porous silicon carbide according to absorption and photoluminescence spectra

被引：0
|
作者：
N. I. Berezovska
Yu. Yu. Bacherikov
R. V. Konakova
O. B. Okhrimenko
O. S. Lytvyn
L. G. Linets
A. M. Svetlichnyi
机构：
[1] Kyiv National University named by Taras Shevchenko,Faculty of Physics
[2] National Academy of Sciences of Ukraine,Lashkarev Institute of Semiconductor Physics
[3] Southern Federal University,Taganrog Institute of Technology
来源：
Semiconductors | 2014年 / 48卷
关键词：
Porous Layer; Gallium Nitride; Anodic Etching; Porous Silicon Carbide; Excitation Photon Energy;
D O I：
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中图分类号：
学科分类号：
摘要：
The results of the atomic-force microscopy, optical-absorption spectroscopy, and photoluminescence spectroscopy of porous silicon carbide (por-SiC) produced by anodic etching are reported. Analysis of the data shows that the cubic SiC phase is lacking in the porous layer and the photoluminescence signal from por-SiC at the excitation photon energy hνex ≤ Eg appears due to the formation of radiative centers associated with impurity atoms and surface defects produced upon anodic etching of the sample and subsequent treatment to uncover the pores.
引用
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页码：1028 / 1030
页数：2
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