Nanocrystalline copper selenide thin films by chemical spray pyrolysis

被引:0
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作者
Abhijit A. Yadav
机构
[1] Rajarshi Shahu Mahavidyalaya,Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics
关键词
Substrate Temperature; Carrier Concentration; Spray Pyrolysis; Spray Pyrolysis Technique; Spray Pyrolysis Method;
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学科分类号
摘要
Thin films of copper selenide were deposited onto amorphous glass substrates at various substrate temperatures by computerized spray pyrolysis technique. The as deposited copper selenide thin films were used to study a wide range of characteristics including structural, surface morphological, optical and electrical, Hall Effect and thermo-electrical properties. X-ray diffraction study reveals that the films are polycrystalline in nature with hexagonal (mineral klockmannite) crystal structure irrespective of the substrate temperature. The crystalline size is found to be in the range of 23–28 nm. The SEM study reveals that the grains are uniform with uneven spherically shaped and spread over the entire surface of the substrates. EDAX analysis confirmed the nearly stoichiometric deposition of the film at 350 °C. The direct band gap values are found to be in the range 2.29–2.36 eV depending on the substrate temperature. The Hall Effect study reveals that the films exhibit p-type conductivity. The values of carrier concentration and mobility for the film are found to be 5.02 × 1017 cm−3 and 5.19 × 10−3 cm2 V−1 s−1; respectively for film deposited at 350 °C.
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页码:1251 / 1257
页数:6
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