Phase behaviour of n-hexane/perfluoro-n-hexane binary thin wetting films

被引:0
|
作者
W. Prange
W. Press
M. Tolan
C. Gutt
机构
[1] Christian-Albrechts-Universität zu Kiel,Institut für Experimentelle und Angewandte Physik
[2] Institut Laue-Langevin,Fachbereich Physik
[3] Universität Dortmund,undefined
来源
The European Physical Journal E | 2004年 / 15卷
关键词
Binary Mixture; Silicon Substrate; Liquid Film; Phase Behaviour; Concentration Distribution;
D O I
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中图分类号
学科分类号
摘要
We present X-ray reflectivity investigations of the concentration distribution in binary liquid thin films on silicon substrates. The liquid-vapor coexistence of the binary mixture investigated, hexane and perfluorohexane, is far from criticality. Therefore, a sharp interface separates the liquid film from the vapor. The data reveal a separation of the film in layers parallel to the substrate. A phase diagram is constructed as a projection to the (composition difference, temperature) space, covering a temperature range corresponding to the one-phase and the two-phase regime of the bulk liquid. Although the composition data indicate a mixing gap similar to that of the bulk system, there are two major differences: i) only the near-surface phase changes its composition significantly, and ii) a composition gradient in the film exists also at higher temperatures where in the bulk system the one-phase regime exists.
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页码:13 / 17
页数:4
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