Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6

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作者
Xiaolei Wang
Zixuan Shang
Chen Zhang
Jiaqian Kang
Tao Liu
Xueyun Wang
Siliang Chen
Haoliang Liu
Wei Tang
Yu-Jia Zeng
Jianfeng Guo
Zhihai Cheng
Lei Liu
Dong Pan
Shucheng Tong
Bo Wu
Yiyang Xie
Guangcheng Wang
Jinxiang Deng
Tianrui Zhai
Hui-Xiong Deng
Jiawang Hong
Jianhua Zhao
机构
[1] Beijing University of Technology,Department of Physics and Optoelectronic Engineering, Faculty of Science
[2] Chinese Academy of Sciences,State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors
[3] Beijing Institute of Technology,School of Aerospace Engineering
[4] University of Electronic Science and Technology of China,National Engineering Research Center of Electromagnetic Radiation Control Materials
[5] Harbin Institute of Technology (Shenzhen),Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science
[6] Shenzhen University,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering
[7] Renmin University of China,Department of Physics and Beijing Key Laboratory of Opto
[8] Beijing University of Technology,electronic Functional Materials & Micro
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摘要
Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric and ferromagnetic orders. The effective manipulation of their intrinsic anisotropy makes it promising to control multiple degrees of the storage “medium”. Here, we have discovered intriguing in-plane electrical and magnetic anisotropies in van der Waals (vdW) multiferroic CuCrP2S6. The uniaxial anisotropies of current rectifications, magnetic properties and magnon modes are demonstrated and manipulated by electric direction/polarity, temperature variation and magnetic field. More important, we have discovered the spin-flop transition corresponding to specific resonance modes, and determined the anisotropy parameters by consistent model fittings and theoretical calculations. Our work provides in-depth investigation and quantitative analysis of electrical and magnetic anisotropies with the same easy axis in vdW multiferroics, which will stimulate potential device applications of artificial bionic synapses, multi-terminal spintronic chips and magnetoelectric devices.
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