Manipulation of current rectification in van der Waals ferroionic CuInP2S6

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作者
Xingan Jiang
Xueyun Wang
Xiaolei Wang
Xiangping Zhang
Ruirui Niu
Jianming Deng
Sheng Xu
Yingzhuo Lun
Yanyu Liu
Tianlong Xia
Jianming Lu
Jiawang Hong
机构
[1] Beijing Institute of Technology,School of Aerospace Engineering
[2] Beijing University of Technology,College of Physics and Optoelectronics, Faculty of Science
[3] Peking University,State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano
[4] Renmin University of China,optoelectronics, School of Physics
[5] Tianjin Normal University,Department of Physics and Beijing Key Laboratory of Opto
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Nature Communications | / 13卷
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摘要
Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.
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