Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

被引：0

作者：

Jia-Hui Tan

Zhi-zhan Chen

Wu-Yue Lu

Yue Cheng

Hong He

Yi-Hong Liu

Yu-Jun Sun

Gao-Jie Zhao

机构：

[1] Shanghai Normal University,Department of Physics

来源：

Nanoscale Research Letters | / 9卷

关键词：

Constant pulsed current; Uniform mesopores; Cycle time; Pause time;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (Toff) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with Toff. The hole concentration decreasing at the pore tips during the Toff is the main reason for uniformity.

引用

共 50 条

[41] Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers
Hochreiter A.
Groß F.
Möller M.-N.
Krieger M.
Weber H.B.
Scientific Reports, 13 (1)
[42] Effects of Reactive Ion Etching Parameters on Etching Rate and Surface Roughness of 4H-SiC
Wan Zehong
Cui Enkang
Yu Shengtao
Lei Yu
Gui Chengqun
Zhou Shengjun
LASER & OPTOELECTRONICS PROGRESS, 2021, 58 (19)
[43] H2 etching and epitaxial growth on 4H-SiC boule domes
Myers-Ward, Rachael L.
Lew, Kok-Keong
VanMil, Brenda L.
Eddy, Charles R., Jr.
Gaskill, D. Kurt
Wood, Colin E.
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 541 - +
[44] Research on Ultraviolet Femtosecond Pulsed Laser Cutting 4H-SiC
Huang, Yunsong
Li, Yongdu
Shen, Yanfei
Zhao, Qingchun
Chen, Chen
Lu, Chao
24TH NATIONAL LASER CONFERENCE & FIFTEENTH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS, 2020, 11717
[45] Picosecond pulsed laser ablation and micromachining of 4H-SiC wafers
Molian, Pal
Pecholt, Ben
Gupta, Saurabh
APPLIED SURFACE SCIENCE, 2009, 255 (08) : 4515 - 4520
[46] Reduction of surface roughness of 4H-SiC by catalyst-referred etching
Okamoto, T.
Sano, Y.
Hara, H.
Hatayama, T.
Arima, K.
Yagi, K.
Murata, J.
Sadakuni, S.
Tachibana, K.
Shirasawa, Y.
Mimura, H.
Fuyuki, T.
Yamauchi, K.
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 775 - +
[47] 4H-SiC substrate orientation effects on hydrogen etching and epitaxial growth
Landini, BE
Brandes, GR
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 185 - 188
[48] A dry etching method for 4H-SiC via using photoresist mask
Liu, Rui
Wu, Hao
Zhang, Hongdan
Li, Chen
Tian, Liang
Li, Ling
Li, Jialin
Wu, Junmin
Pan, Yan
JOURNAL OF CRYSTAL GROWTH, 2020, 531
[49] Role of the oxidizing agent in the etching of 4H-SiC substrates with molten KOH
Na, Moonkyong
Kang, In Ho
Moon, Jeong Hyun
Bahng, Wook
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 69 (11) : 1677 - 1682
[50] Dislocation analysis of 4H-SiC using KOH low temperature etching
Sato, Takahiro
Suzuki, Yuya
Ito, Hiroyuki
Isshiki, Toshiyuki
Fukui, Munetoshi
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 358 - +

← 1 2 3 4 5 →