ZnS Buffer Layers Grown by Modified Chemical Bath Deposition for CIGS Solar Cells

ZnS thin films were prepared by the chemical bath deposition method using disodium ethylene-diaminetetraacetic acid and hexamethylenetetramine as complexing agents in acidic conditions. The film prepared using a preheated S-ion source showed full surface coverage, but some clusters were found that were generated by the cluster-by-cluster reaction mechanism. On the other hand, the film prepared without this source had a uniform, dense, and smooth surface and showed fewer clusters than the film prepared using a preheated S-ion source. The x-ray photoelectron spectroscopy spectra showed the energy core levels of Zn, O, and S components, and Zn-OH bonding decreased on the film using the preheated S-ion source. Especially, various binding energy peaks were found in the Zn 2p3/2 spectrum by Gaussian function fitting, and no peak corresponding to Zn-OH bonding was found for the film prepared using a preheated S-ion source. Moreover, the x-ray diffraction spectrum of the ZnS thin film using a non-preheated S-ion source showed amorphous or nanoscale crystallinity, but the emission peaks indicated that the structure of the film using preheated S-ion source was zincblende.