A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs

This paper presents a physics-based compact of indium mole fraction dependent analytical model for static and dynamic characteristics of GaN-based MOS-HEMTs. The model covers all the different operating regimes of the MOS-HEMT devices. The model is evaluated step by step with excellent agreement compared with the simulated data obtained by Atlas-TCAD simulation and the experimental data have demonstrated the validity of the proposed model for different indium mole fractions (12, 15, 17, and 18)%. From static and dynamic characteristics, it is also observed that by careful setting of the indium mole fraction for GaN-based MOS-HEMTs can improve the performance of the device, and; hence, it is proper for high performance low loss applications. MOS-HEMTs produce high drain current of 1227 A/m at a positive gate bias Vgs\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$V_{\rm{gs}}$$\end{document} of 3 V and with 15% of indium mole fraction, high transconductance of 268 S/m, and high cut-off frequency of 35 GHz at x = 18% indium mole fraction.