Annealing behavior of InAs/GaAs quantum dot structures

被引：0
|
作者：
Z. M. Wang
S. L. Feng
Z. D. Lu
Q. Zhao
X. P. Yang
Z. G. Chen
Z. Y. Xu
H. Z. Zheng
机构：
[1] The Chinese Academy of Sciences,National Laboratory for Superlattices & Microstructures, Institute of Semiconductors
来源：
Journal of Electronic Materials | 1998年 / 27卷
关键词：
Annealing; InAs/GaAs; quantum dots;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We investigate the annealing behavior of InAs layers with different thicknesses in a GaAs matrix. The diffusion enhancement by strain, which is well established in strained quantum wells, occurs in InAs/GaAs quantum dots (QDs). A shift of the QD luminescence peak toward higher energies results from this enhanced diffusion. In the case of structures where a significant portion of the strain is relaxed by dislocations, the interdiffusion becomes negligible, and there is a propensity to generate additional dislocations. This results in a decrease of the QD luminescence intensity, and the QD peak energy is weakly affected.
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页码：59 / 61
页数：2
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