Strain-renormalized energy spectra of electrons and holes in InAs quantum dots in the InAs/GaAs heterosystem

被引:0
|
作者
O. O. Dan’kiv
R. M. Peleshchak
机构
[1] Drogobych State Pedagogical University,
来源
Technical Physics Letters | 2005年 / 31卷
关键词
Layer Thickness; Energy Spectrum; Elastic Strain; Strain Field; Lattice Mismatch;
D O I
暂无
中图分类号
学科分类号
摘要
Analytical expressions describing the energy spectrum of electrons and holes are obtained for a quantum dot (QD) occurring in a self-consistent strain field created by an array of coherently stressed QDs. A method of taking into account the lattice mismatch at the QD-matrix interface is proposed that allows for the dependence of the mismatch parameter on the QD size and the matrix layer thickness. It is shown that the internal elastic strain arising at the QD-matrix interface influences the energy spectrum of electrons more significantly than the spectrum of holes.
引用
收藏
页码:691 / 694
页数:3
相关论文
共 50 条
  • [31] Strain effects on optical properties of pyramidal InAs/GaAs quantum dots
    Kuo, MK
    Lin, TR
    Liao, BT
    Yu, CH
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4): : 199 - 202
  • [32] Strain-induced material intermixing of InAs quantum dots in GaAs
    Lipinski, MO
    Schuler, H
    Schmidt, OG
    Eberl, K
    Jin-Phillipp, NY
    APPLIED PHYSICS LETTERS, 2000, 77 (12) : 1789 - 1791
  • [33] Alignment of InAs quantum dots on GaAs using the manipulation of strain fields
    Kim, KM
    Park, YJ
    Park, YM
    Nah, JB
    Hyon, CK
    Kim, EK
    Park, JH
    MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF HETEROEPITAXIAL SEMICONDUCTOR THIN FILMS, 2000, 618 : 147 - 152
  • [34] Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice
    Kim, KM
    Park, YJ
    Park, YM
    Hyon, CK
    Kim, EK
    Park, JH
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) : 5453 - 5456
  • [35] InAs/GaAs QUANTUM DOTS COVERED BY GaAsSb STRAIN REDUCING LAYER
    Zikova, Marketa
    Kubistova, Jana
    Hospodkova, Alice
    Pangrac, Jiri
    Oswald, Jiri
    Jiricek, Petr
    NANOCON 2012, 4TH INTERNATIONAL CONFERENCE, 2012, : 204 - 208
  • [36] Evolution of InAs/GaAs quantum dots morphology with different InAs supply
    Zhao, Zhen
    Zhou, Haiyue
    Guo, Xiang
    Luo, Zijiang
    Wang, Jihong
    Wang, Yi
    Wei, Wenzhe
    Ding, Zhao
    Gongneng Cailiao/Journal of Functional Materials, 2015, 46 (23): : 23025 - 23030
  • [37] Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage
    Wang, XQ
    Du, GT
    Jin, Z
    Li, MT
    Yin, JZ
    Li, ZT
    Liu, SY
    Yang, SR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (05): : 2523 - 2526
  • [38] Non-exponential capture of electrons in GaAs with embedded InAs quantum dots
    Walther, C.
    Bollmann, J.
    Kissel, H.
    Kirmse, H.
    Neumann, W.
    Masselink, W.T.
    Physica B: Condensed Matter, 1999, 273 : 971 - 975
  • [39] Non-exponential capture of electrons in GaAs with embedded InAs quantum dots
    Walther, C
    Bollmann, J
    Kissel, H
    Kirmse, H
    Neumann, W
    Masselink, WT
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 971 - 975
  • [40] The Energy Spectrum and Wave Functions of Electrons in Tunnel-Coupled Spherical InAs/GaAs Quantum Dots
    G. F. Glinskii
    D. A. Shapran
    Technical Physics Letters, 2020, 46 : 272 - 274