Organic transistors with high thermal stability for medical applications

被引:0
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作者
Kazunori Kuribara
He Wang
Naoya Uchiyama
Kenjiro Fukuda
Tomoyuki Yokota
Ute Zschieschang
Cherno Jaye
Daniel Fischer
Hagen Klauk
Tatsuya Yamamoto
Kazuo Takimiya
Masaaki Ikeda
Hirokazu Kuwabara
Tsuyoshi Sekitani
Yueh-Lin Loo
Takao Someya
机构
[1] The University of Tokyo,Department of Applied Physics
[2] The University of Tokyo,Department of Electrical and Electronic Engineering
[3] Exploratory Research for Advanced Technology,Department of Chemical and Biological Engineering
[4] Japan Science and Technology Agency,Department of Applied Chemistry
[5] Princeton University,Department of Electrical Engineering
[6] Max Planck Institute for Solid State Research,undefined
[7] Heisenbergstrasse 1,undefined
[8] Stuttgart 70569,undefined
[9] Germany.,undefined
[10] Material Measurement Laboratory,undefined
[11] National Institute of Standards and Technology,undefined
[12] Faculty of Engineering,undefined
[13] Hiroshima University,undefined
[14] Nippon Kayaku Co.,undefined
[15] Ltd.,undefined
[16] Tokyo Fujimi Bldg.,undefined
[17] 1-11-2 Fujimi,undefined
[18] Chiyoda-ku,undefined
[19] Tokyo 102-8172,undefined
[20] Japan.,undefined
[21] Princeton University,undefined
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摘要
The excellent mechanical flexibility of organic electronic devices is expected to open up a range of new application opportunities in electronics, such as flexible displays, robotic sensors, and biological and medical electronic applications. However, one of the major remaining issues for organic devices is their instability, especially their thermal instability, because low melting temperatures and large thermal expansion coefficients of organic materials cause thermal degradation. Here we demonstrate the fabrication of flexible thin-film transistors with excellent thermal stability and their viability for biomedical sterilization processes. The organic thin-film transistors comprise a high-mobility organic semiconductor, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, and thin gate dielectrics comprising a 2-nm-thick self-assembled monolayer and a 4-nm-thick aluminium oxide layer. The transistors exhibit a mobility of 1.2 cm2 V−1s−1 within a 2 V operation and are stable even after exposure to conditions typically used for medical sterilization.
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