Organic transistors with high thermal stability for medical applications

被引:0
|
作者
Kazunori Kuribara
He Wang
Naoya Uchiyama
Kenjiro Fukuda
Tomoyuki Yokota
Ute Zschieschang
Cherno Jaye
Daniel Fischer
Hagen Klauk
Tatsuya Yamamoto
Kazuo Takimiya
Masaaki Ikeda
Hirokazu Kuwabara
Tsuyoshi Sekitani
Yueh-Lin Loo
Takao Someya
机构
[1] The University of Tokyo,Department of Applied Physics
[2] The University of Tokyo,Department of Electrical and Electronic Engineering
[3] Exploratory Research for Advanced Technology,Department of Chemical and Biological Engineering
[4] Japan Science and Technology Agency,Department of Applied Chemistry
[5] Princeton University,Department of Electrical Engineering
[6] Max Planck Institute for Solid State Research,undefined
[7] Heisenbergstrasse 1,undefined
[8] Stuttgart 70569,undefined
[9] Germany.,undefined
[10] Material Measurement Laboratory,undefined
[11] National Institute of Standards and Technology,undefined
[12] Faculty of Engineering,undefined
[13] Hiroshima University,undefined
[14] Nippon Kayaku Co.,undefined
[15] Ltd.,undefined
[16] Tokyo Fujimi Bldg.,undefined
[17] 1-11-2 Fujimi,undefined
[18] Chiyoda-ku,undefined
[19] Tokyo 102-8172,undefined
[20] Japan.,undefined
[21] Princeton University,undefined
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
The excellent mechanical flexibility of organic electronic devices is expected to open up a range of new application opportunities in electronics, such as flexible displays, robotic sensors, and biological and medical electronic applications. However, one of the major remaining issues for organic devices is their instability, especially their thermal instability, because low melting temperatures and large thermal expansion coefficients of organic materials cause thermal degradation. Here we demonstrate the fabrication of flexible thin-film transistors with excellent thermal stability and their viability for biomedical sterilization processes. The organic thin-film transistors comprise a high-mobility organic semiconductor, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, and thin gate dielectrics comprising a 2-nm-thick self-assembled monolayer and a 4-nm-thick aluminium oxide layer. The transistors exhibit a mobility of 1.2 cm2 V−1s−1 within a 2 V operation and are stable even after exposure to conditions typically used for medical sterilization.
引用
收藏
相关论文
共 50 条
  • [1] Organic transistors with high thermal stability for medical applications
    Kuribara, Kazunori
    Wang, He
    Uchiyama, Naoya
    Fukuda, Kenjiro
    Yokota, Tomoyuki
    Zschieschang, Ute
    Jaye, Cherno
    Fischer, Daniel
    Klauk, Hagen
    Yamamoto, Tatsuya
    Takimiya, Kazuo
    Ikeda, Masaaki
    Kuwabara, Hirokazu
    Sekitani, Tsuyoshi
    Loo, Yueh-Lin
    Someya, Takao
    NATURE COMMUNICATIONS, 2012, 3
  • [2] Flexible Low-Voltage Organic Transistors with High Thermal Stability at 250 °C
    Yokota, Tomoyuki
    Kuribara, Kazunori
    Tokuhara, Takeyoshi
    Zschieschang, Ute
    Klauk, Hagen
    Takimiya, Kazuo
    Sadamitsu, Yuji
    Hamada, Masahiro
    Sekitani, Tsuyoshi
    Someya, Takao
    ADVANCED MATERIALS, 2013, 25 (27) : 3639 - 3644
  • [3] Thermal stability of organic transistors with short channel length on ultrathin foils
    Reuveny, Amir
    Yokota, Tomoyuki
    Shidachi, Ren
    Sekitani, Tsuyoshi
    Someya, Takao
    ORGANIC ELECTRONICS, 2015, 26 : 279 - 284
  • [4] Materials and devices with applications in high-end organic transistors
    Takeya, J.
    Uemura, T.
    Sakai, K.
    Okada, Y.
    THIN SOLID FILMS, 2014, 554 : 19 - 26
  • [5] THERMAL STABILITY OF POWER TRANSISTORS
    VAHLE, RW
    ELECTRO-TECHNOLOGY, 1966, 78 (02): : 70 - &
  • [6] Active organic-inorganic sol gel with high thermal stability for nonlinear optical applications
    Zhang, HX
    Lu, D
    Fallahi, M
    APPLIED PHYSICS LETTERS, 2004, 84 (07) : 1064 - 1066
  • [7] Hybrid Organic-metal Oxide Transistors with High Operational Stability
    Li L.
    Cailiao Daobao/Materials Reports, 2020, 34 (04): : 08001 - 08002
  • [8] Hybrid Organic-metal Oxide Transistors with High Operational Stability
    LI Lin
    材料导报, 2020, (08) : 8001 - 8002
  • [9] n-Type Organic Electrochemical Transistors with High Transconductance and Stability
    Wang, Yazhou
    Zhu, Genming
    Zeglio, Erica
    Castillo, Tania Cecilia Hidalgo
    Haseena, Sheik
    Ravva, Mahesh Kumar
    Cong, Shengyu
    Chen, Junxin
    Lan, Liuyuan
    Li, Zhengke
    Herland, Anna
    McCulloch, Iain
    Inal, Sahika
    Yue, Wan
    CHEMISTRY OF MATERIALS, 2023, 35 (02) : 405 - 415
  • [10] Side chain engineering enhances the high-temperature resilience and ambient stability of organic synaptic transistors for neuromorphic applications
    Zhao, Yanfei
    Haseena, Sheik
    Ravva, Mahesh Kumar
    Zhang, Shengjie
    Li, Xiang
    Jiang, Jiandong
    Fu, Yujun
    Inal, Sahika
    Wang, Qi
    Wang, Yazhou
    Yue, Wan
    McCullocn, Iain
    He, Deyan
    NANO ENERGY, 2022, 104