Characterization of SiON/InP MOS structure with sulfidation, fluorination, and hydrogenation

Liquid phase deposited SiON film on InP with (NH4)2S treatment shows superior electrical characteristics due to the reduction of native oxides and sulfur passivation. Simultaneously, HF in SiON liquid phase deposition solution can effectively reduce residual native oxides on InP and provide fluorine passivation in SiON/InP film and interface. With post-metallization annealing (PMA), hydrogen ions can further passivate defects in SiON/InP film and interface. With these treatments, the PMA-LPD-SiON/(NH4)2S-treated InP MOS structure shows excellent electrical characteristics. With the physical thickness of 5.4 nm, the leakage current densities can be as low as 1.25×10−7 and 6.24×10−7 A/cm2 at ±2 V, and the interface state density is 3.25×1011 cm−2 eV−1.