Atomic-layer deposition of thin titanium dioxide films from tetramethoxytitanium and water

被引：0
|
作者：
A. P. Alekhin
A. M. Markeev
D. V. Ovchinnikov
A. A. Solov’ev
V. F. Toknova
机构：
[1] Moscow Institute of Physics and Technology (State University),
来源：
Russian Journal of Applied Chemistry | 2013年 / 86卷
关键词：
Hydroxyapatite; Reaction Cycle; Constant Growth Rate; Thin Titanium Dioxide Film; Precursor System;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Comparative analysis of atomic-layer deposition of titanium dioxide in precursor systems Ti(OCH3)4-H2O and Ti(OC2H5)4-H2O demonstrated that the growth rate of titanium dioxide produced by atomic-layer deposition in the Ti(OCH3)4-H2O system can be adequately estimated using a model taking into account the number and size of ligands in the metal-containing precursor. Studies in simulated body fluids demonstrated that polycrystalline anatase TiO2 coatings are capable of accelerated osteointegration, which makes this precursor promising for development of new biomedical articles.
引用
收藏
页码：817 / 823
页数：6
相关论文
共 50 条
  • [21] ATOMIC LAYER EPITAXY GROWTH OF TITANIUM-DIOXIDE THIN-FILMS FROM TITANIUM ETHOXIDE
    RITALA, M
    LESKELA, M
    RAUHALA, E
    CHEMISTRY OF MATERIALS, 1994, 6 (04) : 556 - 561
  • [22] Holmium titanium oxide thin films grown by atomic layer deposition
    Kukli, Kaupo
    Kemell, Marianna
    Dimri, Mukesh Chandra
    Puukilainen, Esa
    Tamm, Aile
    Stern, Raivo
    Ritala, Mikko
    Leskela, Markku
    THIN SOLID FILMS, 2014, 565 : 261 - 266
  • [23] Review-Atomic Layer Deposition of Silicon Dioxide Thin Films
    Vasilyev, Vladislav Yu.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (05)
  • [24] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
    Choi, B.J., 1600, American Institute of Physics Inc. (98):
  • [25] Atomic-layer deposition of ZrO2 thin films using new alkoxide precursors
    Jones, AC
    Williams, PA
    Roberts, JL
    Leedham, TJ
    Davies, HO
    Matero, R
    Ritala, M
    Leskelä, M
    SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, 2002, 716 : 145 - 150
  • [26] Atomic-layer Deposition of Lutetium Aluminate Thin Films for Non-volatile Memory Applications
    Adelmann, C.
    Swerts, J.
    Conard, T.
    Brijs, B.
    Franquet, A.
    Hardy, A.
    Tielens, H.
    Opsomer, K.
    Moussa, A.
    Van Bael, M. K.
    Jurczak, M.
    Kittl, J. A.
    Van Elshocht, S.
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 473 - 478
  • [27] Structural properties of the titanium dioxide thin films grown by atomic layer deposition at various numbers of reaction cycles
    Alekhin, A. P.
    Gudkova, S. A.
    Markeev, A. M.
    Mitiaev, A. S.
    Sigarev, A. A.
    Toknova, V. F.
    APPLIED SURFACE SCIENCE, 2010, 257 (01) : 186 - 191
  • [28] Synthesis of titanium dioxide thin films via thermo- and plasma-enhanced atomic layer deposition
    Ambartsumov, M. G.
    Chapura, O. M.
    Tarala, V. A.
    APPLIED SURFACE SCIENCE, 2024, 672
  • [29] Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water
    Kukli, K
    Ritala, M
    Sajavaara, T
    Keinonen, J
    Leskelä, M
    CHEMICAL VAPOR DEPOSITION, 2002, 8 (05) : 199 - 204
  • [30] Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water
    Kukli, K
    Ritala, M
    Sajavaara, T
    Keinonen, J
    Leskelä, M
    ADVANCED MATERIALS, 2002, 14 (17) : A199 - +
12345