The Influence of the Conditions of Getter Formation in High-Resistivity Silicon on the Characteristics of PIN Photodiodes

被引：0
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作者：
I. B. Chistokhin
K. B. Fritzler
机构：
[1] Rzhanov Institute of Semiconductor Physics,
[2] Siberian Branch,undefined
[3] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 2020年 / 46卷
关键词：
gettering; PIN photodiode; high-resistivity silicon; dark currents.;
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摘要：
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页码：1057 / 1059
页数：2
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