Sputtering of Silicon Surface during Low-Energy High-Dose Implantation with Silver Ions

被引:0
|
作者
V. V. Vorob’ev
A. M. Rogov
V. I. Nuzhdin
V. F. Valeev
A. L. Stepanov
机构
[1] Interdisciplinary Center Analytic Microscopy,
[2] Kazan Federal University,undefined
[3] Kazan Zavoisky Physical Technical Institute,undefined
[4] Federal Scientific Center KazNTs,undefined
[5] Russian Academy of Sciences,undefined
来源
Technical Physics | 2020年 / 65卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1156 / 1162
页数:6
相关论文
共 50 条
  • [21] SPIKES IN LOW-ENERGY SPUTTERING OF SILVER AND GOLD
    SZYMONSKI, M
    DEVRIES, AE
    PHYSICS LETTERS A, 1977, 63 (03) : 359 - 360
  • [22] LOW-ENERGY IMPLANTATION OF ARSENIC IN SILICON
    KACHURIN, GA
    MAYER, VA
    ROMANOV, SI
    VOELSKOW, M
    KLABES, R
    WIESER, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02): : 475 - 480
  • [23] SPECTROMETRY OF LOW-ENERGY IONS WITH SILICON SURFACE BARRIER DETECTORS
    BOGDANOV, GF
    MAKSIMEN.BP
    ATOMNAYA ENERGIYA, 1972, 32 (01): : 66 - +
  • [24] SPUTTERING OF ADSORBED MONOLAYERS BY LOW-ENERGY IONS
    BRODKORB, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01): : 83 - 93
  • [25] LOW-ENERGY SPUTTERING OF COBALT BY CESIUM IONS
    RAY, P
    MUKHERJEE, A
    HANDOO, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 40-1 : 299 - 301
  • [26] SPUTTERING OF DIATOMIC COMPOUNDS BY LOW-ENERGY IONS
    MARTYNEN.TP
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1969, 14 (12): : 1935 - &
  • [27] VOLUME CHANGES OF SILICON THIN SURFACE-LAYERS DURING HIGH-DOSE OXYGEN IMPLANTATION
    GRNO, J
    BEDERKA, S
    VESELY, M
    MATES, P
    THIN SOLID FILMS, 1984, 111 (01) : 59 - 64
  • [28] FORMATION OF BURIED OXIDE LAYERS BY HIGH-DOSE IMPLANTATION OF OXYGEN IONS IN SILICON
    DAS, K
    BUTCHER, JB
    ANAND, KV
    JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (04) : 635 - 654
  • [29] Surface cavities produced by high-dose nitrogen ion implantation into silicon
    Rudolphi, M.
    Markwitz, A.
    Baumann, H.
    SURFACE AND INTERFACE ANALYSIS, 2007, 39 (08) : 698 - 701
  • [30] Properties of silicide films formed by the low-energy implantation of metal ions into silicon
    Rysbaev, A.S.
    Normuradov, M.T.
    Nasridinov, S.S.
    Adambaev, K.A.
    Radiotekhnika i Elektronika, 1997, 41 (01): : 125 - 128