Conductance switching behavior of GeTe/Sb2Te3 superlattice upon hot-electron injection: a scanning probe microscopy study

被引：0
|
作者：
Leonid Bolotov
Yuta Saito
Tetsuya Tada
Junji Tominaga
机构：
[1] National Institute of Advanced Industrial Science and Technology,CREST
[2] Japan Science and Technology Agency,undefined
来源：
MRS Advances | 2016年 / 1卷 / 5期
关键词：
D O I：
10.1557/adv.2016.137
中图分类号：
学科分类号：
摘要：
Topological (GeTe)/(Sb2Te3) superlattices (SL) are of practical interest for memory applications because of different mechanism of electric conductance switching in the crystalline phase. In the work, electrical switching behavior of individual SL grains was examined employing a multimode scanning probe microscope (MSPM) in a lithography mode at room temperature. Using programmed bias voltage with different amplitude and pulse duration, we observed the position-dependent variations of the switching voltage and the current injection delay for [(GeTe)2 (Sb2Te3)]4 SLs on Si(100). The results shed a light on the role of electric field and hot-electron injection on the SL conductance switching.
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页码：375 / 380
页数：5
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