Improvement of photon extraction efficiency of GaN-based LED using micro and nano complex polymer structures

被引:0
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作者
Joong-Yeon Cho
Kyeong-Jae Byeon
Hyoungwon Park
Jinseung Kim
Hyeong-Seok Kim
Heon Lee
机构
[1] Korea University,Department of Materials Science and Engineering
[2] Chung-Ang University,Department of Electrical and Electronics Engineering
来源
Nanoscale Research Letters | / 6卷
关键词
PDMS; Total Internal Reflection; External Quantum Efficiency; Light Extraction Efficiency; Lead Device;
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学科分类号
摘要
A micro- and nanoscale complex structure made of a high refractive index polymer (n = 2.08) was formed on the ITO electrode layer of an edge-emitting type GaN blue light-emitting diode (LED), in order to improve the photon extraction efficiency by suppressing total internal reflection of photons. The nanoimprint lithography process was used to form the micro- and nanoscale complex structures, using a polymer resin with dispersed TiO2 nano-particles as an imprint resin. Plasma processing, such as reactive ion etching, was used to form the micro- and nano-scale complex structure; thus, plasma-induced damage to the LED device can be avoided. Due to the high refractive index polymeric micro- and nanostructure on the ITO layer, the electroluminescence emission was increased up to 20%, compared to an identical LED that was grown on a patterned sapphire substrate to improve photon extraction efficiency.
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