Formation mechanism of chained and crystallographically oriented pores on n-InP surfaces

被引：0

作者：

Suchikova, Yana ^{[1
]}

Bohdanov, Ihor ^{[1
]}

Kovachov, Sergii ^{[1
]}

Lazarenko, Andriy ^{[1
]}

Popov, Aleksandr A. ^{[2
]}

Tsebriienko, Tamara ^{[2
]}

Karipbayev, Zhakyp ^{[3
]}

Popov, Anatoli I. ^{[2
]}

机构：

[1] Berdyansk State Pedagogical University, Schmidt Street, 4, Berdyansk,71100, Ukraine

[2] Institute of Solid State Physics, University of Latvia, Kengaraga, 8, Riga,1063, Latvia

[3] L.N. Gumilyov, Eurasian National University, Satpayev, 2, Nur-Sultan,010008, Kazakhstan

来源：

Applied Nanoscience (Switzerland) | 2024年 / 14卷 / 01期

关键词：

Crystal orientation - Electrochemical etching - Electrolytes - III-V semiconductors - Pore size - Semiconducting indium phosphide - Single crystals;

D O I：

10.1007/s13204-023-02973-5

中图分类号：

学科分类号：

摘要：

This article presents a study of the mechanism of porous space formation on the surface of single-crystal indium phosphide. The dissolution features of crystals of various types of conductivity and crystallographic orientation of the surface are demonstrated. The attention is focused on the formation of pore chain channels on the surface of n-InP (111). The main stages of the pore formation process are highlighted, which are described according to two competing theories—spontaneous seeding and defect–dislocation mechanism. © 2023, King Abdulaziz City for Science and Technology.

引用

页码：231 / 239

页数：8

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