Effect of post-deposition annealing on microstructural and optical properties of barium strontium titanate thin films deposited by r.f. magnetron sputtering

被引:0
|
作者
C. B. Samantaray
A. Dhar
D. Bhattacharya
M. L. Mukherjee
S. K. Ray
机构
[1] Indian Institute of Technology,Department of Physics and Meteorology
[2] Indian Institute of Technology,Materials Science Center
关键词
Refractive Index; Absorption Band; Optical Property; Strontium; Photon Energy;
D O I
暂无
中图分类号
学科分类号
摘要
The effect of post-deposition annealing on the structural and optical properties of barium strontium titanate, Ba0.8Sr0.2TiO3 film has been investigated. The films have been deposited on oxidized p-silicon substrates by r.f. magnetron sputtering followed by annealing in O2 atmosphere at different temperatures. In situ deposition has also been carried out at 550 °C for comparison. The nature of the variation of refractive index and extinction coefficient with annealing temperature and wavelength has been studied. Absorption band edges shift towards lower photon energy values as the temperature is increased causing a reduction in the optical band gap energy. Infrared absorption bands show a cubic symmetry at lower frequency and are found to be broadened and even split at higher frequency.
引用
收藏
页码:365 / 370
页数:5
相关论文
共 50 条
  • [31] Effect of post-deposition annealing on phase formation and properties of RF magnetron sputtered PLZT thin films
    Singh, Ravindra
    Goel, T. C.
    Chandra, Sudhir
    MATERIALS RESEARCH BULLETIN, 2008, 43 (02) : 384 - 393
  • [32] Influence of vacuum annealing on properties of ZnO:Ga films prepared by r.f. magnetron sputtering
    Ma, J
    Yu, XH
    Ji, F
    Wang, YH
    Zhang, XJ
    Cheng, CF
    Ma, HL
    RARE METAL MATERIALS AND ENGINEERING, 2005, 34 (07) : 1166 - 1168
  • [33] Influence of post-deposition annealing on the microstructure and properties of Ga2O3:Mn thin films deposited by RF planar magnetron sputtering
    Kim, Joo Han
    Yoon, Kyung Ho
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 (09) : 879 - 884
  • [34] Influence of post-deposition annealing on the microstructure and properties of Ga2O3:Mn thin films deposited by RF planar magnetron sputtering
    Joo Han Kim
    Kyung Ho Yoon
    Journal of Materials Science: Materials in Electronics, 2009, 20 : 879 - 884
  • [35] Effect of R.F Power to the Properties of ZnO Thin Films Deposited by Magnetron Sputtering
    Sin, N. D. Md
    Musa, M. Z.
    Rusop, M.
    NANOMATERIALS: SYNTHESIS AND CHARACTERIZATION, 2012, 364 : 119 - 123
  • [36] Realization of high tunability barium strontium titanate thin films by rf magnetron sputtering
    Padmini, P
    Taylor, TR
    Lefevre, MJ
    Nagra, AS
    York, RA
    Speck, JS
    APPLIED PHYSICS LETTERS, 1999, 75 (20) : 3186 - 3188
  • [37] AZO films prepared by r.f. magnetron sputtering: structural, electrical and optical properties
    Grilli, Maria Luisa
    Sytchkova, Anna Krasilnikova
    Boycheva, Sylvia
    Piegari, Angela
    ADVANCES IN OPTICAL THIN FILMS III, 2008, 7101
  • [38] The influence of the momentum transfer on the structural and optical properties of ZnSe thin films prepared by r.f. magnetron sputtering
    Rizzo, A
    Tagliente, MA
    Caneve, L
    Scaglione, S
    THIN SOLID FILMS, 2000, 368 (01) : 8 - 14
  • [39] Electrical and infrared characterization of thin SiO2 films deposited by r.f. magnetron sputtering
    Nedev, N.
    Manolov, E.
    Nesheva, D.
    Terrazas, J. M.
    Valdez, B.
    Curiel, M. A.
    Zlatev, R.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (09): : 1300 - 1303
  • [40] Effect of oxygen to argon ratio on the properties of thin SiO x films deposited by r.f. sputtering
    Terrazas, J. M.
    Nedev, N.
    Manolov, E.
    Valdez, B.
    Nesheva, D.
    Curiel, M. A.
    Haasch, R.
    Petrov, I.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2010, 21 (05) : 481 - 485