Multifunctional high-performance van der Waals heterostructures

被引:0
|
作者
Mingqiang Huang
Shengman Li
Zhenfeng Zhang
Xiong Xiong
Xuefei Li
Yanqing Wu
机构
[1] Wuhan National High Magnetic Field Center and School of Physics,
[2] Huazhong University of Science and Technology,undefined
[3] School of Electrical and Electronic Engineering,undefined
[4] Huazhong University of Science and Technology,undefined
来源
Nature Nanotechnology | 2017年 / 12卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
A range of novel two-dimensional materials have been actively explored for More Moore and More-than-Moore device applications because of their ability to form van der Waals heterostructures with unique electronic properties. However, most of the reported electronic devices exhibit insufficient control of multifunctional operations. Here, we leverage the band-structure alignment properties of narrow-bandgap black phosphorus and large-bandgap molybdenum disulfide to realize vertical heterostructures with an ultrahigh rectifying ratio approaching 106 and on–off ratio up to 107. Furthermore, we design and fabricate tunable multivalue inverters, in which the output logic state and window of the mid-logic can be controlled by specific pairs of channel length and, most importantly, by the electric field, which shifts the band-structure alignment across the heterojunction. Finally, high gains over 150 are achieved in the inverters with optimized device geometries, showing great potential for future logic applications.
引用
收藏
页码:1148 / 1154
页数:6
相关论文
共 50 条
  • [21] Polaritons in Van der Waals Heterostructures
    Guo, Xiangdong
    Lyu, Wei
    Chen, Tinghan
    Luo, Yang
    Wu, Chenchen
    Yang, Bei
    Sun, Zhipei
    de Abajo, F. Javier Garcia
    Yang, Xiaoxia
    Dai, Qing
    ADVANCED MATERIALS, 2023, 35 (17)
  • [22] Noninvasive Photodelamination of van der Waals Semiconductors for High-Performance Electronics
    Xu, Ning
    Pei, Xudong
    Qiu, Lipeng
    Zhan, Li
    Wang, Peng
    Shi, Yi
    Li, Songlin
    ADVANCED MATERIALS, 2023, 35 (25)
  • [23] van der Waals Heterostructures with High Accuracy Rotational Alignment
    Kim, Kyounghwan
    Yankowitz, Matthew
    Fallahazad, Babak
    Kang, Sangwoo
    Movva, Hema C. P.
    Huang, Shengqiang
    Larentis, Stefano
    Corbet, Chris M.
    Taniguchi, Takashi
    Watanabe, Kenji
    Banerjee, Sanjay K.
    LeRoy, Brian J.
    Tutuc, Emanuel
    NANO LETTERS, 2016, 16 (03) : 1989 - 1995
  • [24] High-Performance Infrared Self-Powered Photodetector Based on 2D Van der Waals Heterostructures
    Liu, Weijing
    Wu, Yifan
    Bao, Xiaozhendong
    Sun, Lin
    Xie, Yuee
    Chen, Yuanping
    ADVANCED FUNCTIONAL MATERIALS, 2025,
  • [25] Two-dimensional van der Waals graphene/transition metal nitride heterostructures as promising high-performance nanodevices
    Pham, Khang D.
    Nguyen, Cuong Q.
    Nguyen, C., V
    Cuong, Pham, V
    Hieu, Nguyen, V
    NEW JOURNAL OF CHEMISTRY, 2021, 45 (12) : 5509 - 5516
  • [26] Performance optimization of thermionic refrigerators based on van der Waals heterostructures
    SuSu Qiu
    ZeMin Ding
    LinGen Chen
    YanLin Ge
    Science China Technological Sciences, 2021, 64 : 1007 - 1016
  • [27] Performance optimization of thermionic refrigerators based on van der Waals heterostructures
    Qiu SuSu
    Ding ZeMin
    Chen LinGen
    Ge YanLin
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2021, 64 (05) : 1007 - 1016
  • [28] Performance optimization of thermionic refrigerators based on van der Waals heterostructures
    QIU SuSu
    DING ZeMin
    CHEN LinGen
    GE YanLin
    Science China(Technological Sciences), 2021, 64 (05) : 1007 - 1016
  • [29] Performance optimization of thermionic refrigerators based on van der Waals heterostructures
    QIU SuSu
    DING ZeMin
    CHEN LinGen
    GE YanLin
    Science China(Technological Sciences), 2021, (05) : 1007 - 1016
  • [30] A High-Performance Electrode Based on van der Waals Heterostructure for Neural Recording
    Liu, Shuangjie
    Liu, Ling
    Zhao, Yue
    Wang, Yang
    Wu, Yingpeng
    Zhang, Xiao-Dong
    Ming, Dong
    NANO LETTERS, 2022, 22 (11) : 4400 - 4409