Wettability in pressure infiltration of SiC and oxidized SiC particle compacts by molten Al and Al-12wt% Si alloy

被引:0
|
作者
Molina J.M. [1 ,2 ]
Tian J. [3 ]
Garcia-Cordovilla C. [4 ]
Louis E. [1 ,2 ,5 ]
Narciso J. [2 ,6 ]
机构
[1] Departamento de Física Aplicada, Universidad de Alicante
[2] Instituto de Materiales, Universidad de Alicante
[3] Institute of Material Science and Engineering, Ocean University of China
[4] Centro de Investigación y Desarrollo, Flat Rolling Products, Alcoa Europe
[5] Unidad Asociada of the Consejo Superior de Investigaciones Científicas, Universidad de Alicante
[6] Departamento de Química Inorgánica, Universidad de Alicante
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D O I
10.1557/jmr.2007.0282
中图分类号
学科分类号
摘要
The infiltration behavior of compacts of SiC particles in two surface conditions, as-received and thermally oxidized, was investigated by using pure Al and Al-12wt%Si as infiltrating metals. Analysis of the threshold pressure for infiltration revealed that the process is governed by the same contact angle for all different systems, no matter the metal or particle condition. This leads to the conclusion that oxidation does not modify the wetting characteristics of the particles, most probably because they are already covered by a thin native oxide layer that remains unaltered in processing routes involving short contact times and low temperatures, such as actual conditions of pressure infiltration at 700 °C. © 2007 Materials Research Society.
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页码:2273 / 2278
页数:5
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