Study and optimization of the photoluminescence of amorphous silicon carbide thin films

被引：0
|
作者：
Maricela Meneses
Mario Moreno
Alfredo Morales
Alfonso Torres
Pedro Rosales
Israel Vivaldo
机构：
[1] Instituto Nacional de Astrofísica,Óptica y Electrónica, INAOE
[2] Centro de Investigación en Materiales Avanzados,FCE, BUAP
[3] S.C.,undefined
[4] CIMAV-Unidad Monterrey,undefined
[5] Benemerita Universidad Autónoma de Puebla,undefined
[6] 72000,undefined
来源：
MRS Advances | 2018年 / 3卷 / 64期
关键词：
D O I：
10.1557/adv.2019.1
中图分类号：
学科分类号：
摘要：
In this work we report the study of the effect of the deposition parameters on the photoluminescence (PL) intensity of hydrogenated amorphous silicon-carbide (a-SiC:H) films deposited at very low temperature (150 °C) by Plasma Enhanced Chemical Vapor Deposition (PECVD). We have observed that the main deposition parameter that influences the wavelength emission peak is the methane/silane (CH4/SiH4) ratio used for the films deposition, due to a change on the film carbon content. On the other hand the deposition RF power affects the PL intensity, without a change in the PL emission peak. Also we have studied the effect of the film thickness on the PL intensity and we have observed an optimal film thickness.
引用
收藏
页码：3905 / 3916
页数：11
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