Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches

被引：0
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作者：
Maryam Shaveisi
Peiman Aliparast
机构：
[1] Aerospace Research Institute (Ministry of Science,
[2] Research and Technology),undefined
来源：
Frontiers of Optoelectronics | / 16卷
关键词：
Mid-wave infrared detectors; III-V compound semiconductors; Grading material systems; nBn architecture;
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