High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN

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作者
Mihovil Bosnar
Alexandra Yu. Vyazovskaya
Evgeniy K. Petrov
Evgueni V. Chulkov
Mikhail M. Otrokov
机构
[1] Donostia International Physics Center,Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Ciencias Químicas
[2] Universidad del País Vasco UPV/EHU,Centro de Física de Materiales (CFM
[3] Tomsk State University,MPC)
[4] Saint Petersburg State University,undefined
[5] Centro Mixto (CSIC-UPV/EHU),undefined
[6] IKERBASQUE,undefined
[7] Basque Foundation for Science,undefined
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摘要
Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number C that defines the quantized Hall conductance as Sxy = Ce2/h. Increasing C is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution to this problem so far, with the majority of existing Chern insulators showing C = 1. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-C state in MnBi2Te4/hBN van der Waals multilayer heterostructures. We show that a stack of n MnBi2Te4 films with C = 1 intercalated by hBN monolayers gives rise to a high Chern number state with C = n, characterized by n chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance Sxy = Ce2/h. Our results, therefore, pave the way to practical high-C quantized Hall systems.
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