Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment

被引：0
|
作者：
Igor A. Khramtsov
Dmitry Yu. Fedyanin
机构：
[1] Moscow Institute of Physics and Technology,Laboratory of Nanooptics and Plasmonics, Center for Photonics and 2D Materials
来源：
Nano-Micro Letters | 2021年 / 13卷
关键词：
Color centers; Electron capture cross section; Single-photon emitting diodes; Single-photon electroluminescence; Charge state control;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Junction Engineering-Based Modeling and Optimization of Deep Junction Silicon Single-Photon Avalanche Diodes for Device Scaling
    Lee, Haewon
    Choi, Hyejeong
    Yun, Ilgu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (09) : 4970 - 4975
  • [32] Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes
    Ha, S
    Skowronski, M
    Lendenmann, H
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 393 - 398
  • [33] A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate
    Li Zheng
    Liu Danlu
    Dong Jie
    Bian Dajing
    Xu Yue
    ACTA OPTICA SINICA, 2024, 44 (09)
  • [34] Exploring ultrafast single-photon emission of silicon-vacancy color centers in diamond nano-membranes coupled with gold nano-cones
    Kambalathmana, H.
    Flatae, A. M.
    Lagomarsino, S.
    Galal, H.
    Tantussi, F.
    Messina, G. C.
    Woerner, E.
    Wild, C.
    Gelli, N.
    Sciortino, S.
    Giuntini, L.
    De Angelis, F.
    Agio, M.
    QUANTUM NANOPHOTONIC MATERIALS, DEVICES, AND SYSTEMS 2019, 2019, 11091
  • [35] Operational principle of a new amorphous silicon based p-i-i-n color detector
    J Appl Phys, 11 (7666):
  • [36] The operational principle of a new amorphous silicon based p-i-i-n color detector
    Bruggemann, R
    Neidlinger, T
    Schubert, MB
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (11) : 7666 - 7672
  • [37] RECOMBINATION CENTERS AND ELECTRICAL CHARACTERISTICS IN SILICON POWER P-I-N-DIODES IRRADIATED WITH HIGH-ENERGY ELECTRONS
    FUOCHI, PG
    MARTELLI, A
    BISIO, GM
    DIZITTI, E
    MOTTO, MG
    PASSERINI, B
    ZAMBELLI, M
    RADIATION PHYSICS AND CHEMISTRY, 1988, 31 (4-6): : 809 - 819
  • [38] RECOMBINATION CENTERS AND ELECTRICAL CHARACTERISTICS IN SILICON POWER P-I-N DIODES IRRADIATED WITH HIGH ENERGY ELECTRONS.
    Fuochi, P.G.
    Martelli, A.
    Bisio, G.M.
    Di Zitti, E.
    Motto, M.G.
    Passerini, B.
    Zambelli, M.
    Radiation Physics and Chemistry, 1987, 31 (4-6) : 809 - 819
  • [39] Hydrogenated amorphous silicon carbide P-I-N thin-film light emitting diodes with barrier layers inserted at P-I interface
    Jen, Tean-Sen
    Pan, Jen-Wei
    Shin, Nerng-Fu
    Tsay, Wen-Chin
    Hong, Jyh-Wong
    Chang, Chun-Yen
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (1 B): : 827 - 831
  • [40] Room-Temperature Fiber-Coupled Single-Photon Sources based on Colloidal Quantum Dots and SiV Centers in Back-Excited Nanoantennas
    Lubotzky, Boaz
    Nazarov, Alexander
    Abudayyeh, Hamza
    Antoniuk, Lukas
    Lettner, Niklas
    Agafonov, Viatcheslav
    Bennett, Anastasia V.
    Majumder, Somak
    Chandrasekaran, Vigneshwaran
    Bowes, Eric G.
    Htoon, Han
    Hollingsworth, Jennifer A.
    Kubanek, Alexander
    Rapaport, Ronen
    NANO LETTERS, 2024, 24 (02) : 640 - 648
12345