Metal-insulator transition in amorphous Si1−cMnc obtained by ion implantation

被引：0
|
作者：
A. I. Yakimov
A. V. Dvurechenskii
机构：
[1] Siberian Branch of the Russian Academy of Sciences,Institute of Physics
来源：
Journal of Experimental and Theoretical Physics Letters | 1997年 / 65卷
关键词：
71.23.Cq; 71.30.+h;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A metal-insulator transition (MIT) induced by a change in the impurity Mn concentration in a material with topological disorder — amorphous Si1−cMnc — is investigated. It is found that near the critical point the localization radius, permittivity, and conductivity vary according to a power law in accordance with the scaling theory of localization. The critical exponents are determined. It is concluded that the basic mechanisms of the MIT in disordered systems do not depend on the type of disorder and are universal.
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页码：354 / 358
页数：4
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