Metal-insulator transition in amorphous Si1−cMnc obtained by ion implantation

被引：0
|
作者：
A. I. Yakimov
A. V. Dvurechenskii
机构：
[1] Siberian Branch of the Russian Academy of Sciences,Institute of Physics
来源：
Journal of Experimental and Theoretical Physics Letters | 1997年 / 65卷
关键词：
71.23.Cq; 71.30.+h;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A metal-insulator transition (MIT) induced by a change in the impurity Mn concentration in a material with topological disorder — amorphous Si1−cMnc — is investigated. It is found that near the critical point the localization radius, permittivity, and conductivity vary according to a power law in accordance with the scaling theory of localization. The critical exponents are determined. It is concluded that the basic mechanisms of the MIT in disordered systems do not depend on the type of disorder and are universal.
引用
收藏
页码：354 / 358
页数：4
相关论文
共 50 条
  • [1] Metal-insulator transition in amorphous Si1-cMnc obtained by ion implantation
    Yakimov, AI
    Dvurechenskii, AV
    JETP LETTERS, 1997, 65 (04) : 354 - 358
  • [2] METAL-INSULATOR TRANSITION IN THE AMORPHOUS Si1 - xAux SYSTEM WITH A STRONG SPIN-ORBIT INTERACTION.
    Nishida, Nobuhiko
    Furubayashi, Takao
    Yamaguchi, Masaaki
    Morigaki, Kazuo
    Ishimoto, Hidehiko
    Solid-State Electronics, 1984, 28 (1-2) : 81 - 86
  • [3] METAL-INSULATOR TRANSITION IN AMORPHOUS Nb:Si.
    Bishop, D.J.
    Spencer, E.G.
    Dynes, R.C.
    Solid-State Electronics, 1984, 28 (1-2) : 73 - 79
  • [4] Effect of spin-glass ordering on conduction in a-Si1-cMnc near the metal-insulator transition
    Yakimov, AI
    Dvurechenskii, AV
    Adkins, CJ
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1998, 205 (01): : 299 - 303
  • [5] Metal-insulator transition in amorphous alloys
    Möbius, A
    Adkins, CJ
    CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 1999, 4 (03): : 303 - 314
  • [6] Metal-insulator transition in amorphous alloys
    Möbius, A
    Adkins, CJ
    PHYSICA B, 2000, 284 : 1669 - 1670
  • [7] Metal-insulator transition in the In/Si(111) surface
    Riikonen, S.
    Ayuela, A.
    Sanchez-Portal, D.
    SURFACE SCIENCE, 2006, 600 (18) : 3821 - 3824
  • [8] Electronic Structure and Metal-Insulator Transition in Amorphous Pd-Si Alloy Films
    Tanaka, K.
    Furui, K.
    Yamada, M.
    Journal of the Physical Society of Japan, 64 (12):
  • [9] Electronic structure and metal-insulator transition in amorphous Pd-Si alloy films
    Tanaka, K
    Furui, K
    Yamada, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (12) : 4790 - 4798
  • [10] Behavior of the thermopower in amorphous materials at the metal-insulator transition
    Villagonzalo, C
    Römer, RA
    Schreiber, M
    MacKinnon, A
    PHYSICAL REVIEW B, 2000, 62 (24) : 16446 - 16452
12345