Hafnium oxide thin films deposited from a filtered cathodic vacuum arc

被引：0
|
作者：
M. R. Field
J. G. Partridge
J. du Plessis
D. G. McCulloch
机构：
[1] RMIT University,Applied Physics, School of Applied Sciences
来源：
Applied Physics A | 2009年 / 97卷
关键词：
31.15.A-; 68.37.Lp; 71.20.Be;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electrical and structural characteristics of hafnium oxide thin films reactively deposited from a filtered cathodic vacuum arc have been investigated. X-ray photoelectron spectroscopy was used to determine the deposition conditions (Ar/O2 ratio) which produced stoichiometric HfO2 films. Cross-sectional transmission electron microscopy showed that the micro-structure of the films was highly disordered with electron-diffraction analysis providing evidence for the presence of sub-nano-metre crystallites of the monoclinic HfO2 (P21/c) phase. Further evidence for the presence of this phase was provided by measuring the O k-edge using electron energy loss spectroscopy and comparing it with calculations performed using FEFF8.2, a multiple scattering code. Surface imaging revealed that local film damage occurred in films deposited with substrate bias voltages exceeding −200 V. The current-leakage characteristics of the HfO2 films deposited with a bias of approximately −100 V suggest that device grade HfO2 films can be produced from a filtered cathodic vacuum arc.
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页码：627 / 633
页数：6
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