Electrical impedance spectroscopy of neutron-irradiated nanocrystalline silicon carbide (3C-SiC)

被引：0
|
作者：
Elchin M. Huseynov
机构：
[1] National Nuclear Research Center,Department of Nanotechnology and Radiation Material Science
[2] Institute of Radiation Problems of Azerbaijan National Academy of Sciences,undefined
来源：
Applied Physics A | 2018年 / 124卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It the present work, impedance spectra of nanocrystalline 3C-SiC particles have been comparatively analyzed before and after neutron irradiation. Resonance states and shifts were observed at the impedance spectra of nanocrystalline 3C-SiC particles after neutron irradiation. Relaxation time has been calculated from interdependence of real and imaginary parts of impedance of nanocrystalline 3C-SiC particles. Calculated relaxation times have been investigated as a function of neutron irradiation period. Neutron transmutation (31P isotopes production) effects on the impedance spectra and relaxation times have been studied. Moreover, influence of agglomeration and amorphous transformation to the impedance spectra and relaxation times of nanocrystalline 3C-SiC particles have been investigated.
引用
收藏
相关论文
共 50 条
  • [31] POSITRON DIAGNOSTICS OF DEFECTS IN NEUTRON-IRRADIATED SILICON-CARBIDE
    GIRKA, AI
    KULESHIN, VA
    MOKRUSHIN, AD
    MOKHOV, EN
    SVIRIDA, SV
    SHISHKIN, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (07): : 790 - 793
  • [32] ELECTRICAL AND SPECTROSCOPIC ANALYSIS OF NEUTRON-IRRADIATED SILICON DETECTORS
    BALDINI, A
    BORCHI, E
    BRUZZI, M
    SPILLANTINI, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 315 (1-3): : 182 - 187
  • [33] Pair distribution function analysis of neutron-irradiated silicon carbide
    Sprouster, David J.
    Snead, Lance L.
    Dooryhee, Eric
    Ghose, Sanjit K.
    Koyanagi, Takaaki
    Katoh, Yutai
    JOURNAL OF NUCLEAR MATERIALS, 2019, 527
  • [34] Ag transport in high temperature neutron irradiated 3C-SiC
    O'Connell, J. H.
    Neethling, J. H.
    JOURNAL OF NUCLEAR MATERIALS, 2014, 445 (1-3) : 20 - 25
  • [35] Luminescent silicon carbide nanocrystallites in 3C-SiC/polystyrene films
    Fan, JY
    Wu, XL
    Kong, R
    Qiu, T
    Huang, GS
    APPLIED PHYSICS LETTERS, 2005, 86 (17) : 1 - 3
  • [36] Optical spectroscopy study of damage in ion-irradiated 3C-SiC epilayers on a silicon substrate
    Costantini, Jean-Marc
    Gutierrez, Gaelle
    Guillaumet, Maxime
    Lelong, Gerald
    JOURNAL OF APPLIED PHYSICS, 2023, 133 (19)
  • [37] ANNEALING BEHAVIOR OF NEUTRON-IRRADIATED SILICON-CARBIDE TEMPERATURE MONITORS
    PRICE, RJ
    NUCLEAR TECHNOLOGY, 1972, 16 (03) : 536 - &
  • [38] IMPURITY EFFECT ON ELECTRICAL-PROPERTIES OF NEUTRON-IRRADIATED SILICON
    MURIN, LI
    TKACHEV, VD
    DOKLADY AKADEMII NAUK BELARUSI, 1978, 22 (08): : 697 - 700
  • [39] Electrical Properties of Neutron-irradiated Silicon and GaAs Commercial Diodes
    Omar, Nuurul Iffah Che
    Hasbullah, Nurul Fadzlin
    Rashid, Nahrul Khair Alang Md
    Abdullah, Jaafar
    2012 IEEE SYMPOSIUM ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ISIEA 2012), 2012,
  • [40] Growth and Electrical Properties of 3C-SiC/Nanocrystalline Diamond Layered Films
    Koga, Akira
    Teii, Kungen
    Goto, Masaki
    Yamada, Kazuhiro
    Kato, Yoshimine
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (01)
12345