Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

被引：0

作者：

Kwon D.-H. ^{[1
]}

Kim K.M. ^{[1
,2
]}

Jang J.H. ^{[1
]}

Jeon J.M. ^{[1
]}

Lee M.H. ^{[1
,2
]}

Kim G.H. ^{[1
,2
]}

Li X.-S. ^{[3
]}

Park G.-S. ^{[3
]}

Lee B. ^{[4
]}

Han S. ^{[1
]}

Kim M. ^{[1
]}

Hwang C.S. ^{[1
,2
]}

机构：

[1] Department of Materials Science and Engineering, Seoul National University

[2] Inter-university Semiconductor Research Center, Seoul National University

[3] Analytical Research Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600

[4] Department of Physics, Ewha Womans University

来源：

Nature Nanotechnology | 2010年 / 5卷 / 2期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1038/nnano.2009.456

中图分类号：

学科分类号：

摘要：

Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO2/Pt system during resistive switching. In situ current-voltage and low-temperature (∼130 K) conductivity measurements confirm that switching occurs by the formation and disruption of Ti nO2n-1 (or so-called Magnéli phase) filaments. Knowledge of the composition, structure and dimensions of these filaments will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films, and help guide research into the stability and scalability of such films for applications. © 2010 Macmillan Publishers Limited. All rights reserved.

引用

页码：148 / 153

页数：5

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