Nitrogen effect on spin-coated ZnO-based p–n homojunctions: structural, optical and electrical characteristics

In this work, ZnO:Al–N/ZnO:Al and ZnO:Ag–N/ZnO:Al homojunctions were deposited by means of spin coating method using precursors obtained by sol gel chemistry. The optical, structural and electrical properties of spin coated undoped and M-doped ZnO thin films (M = Al, Ag–N and Al–N) using ammonium hydroxide as a nitrogen source are reported. The films showed the wurtzite type structure with a c-axis (002) preferential orientation. The films showed a surface morphology consisting of wrinkles, which were constituted of nanocrystals in the range of ∼ 20 nm. The thin films were highly transparent in the visible region of the electromagnetic spectrum. The optical band gap of the films was close to 3.30 eV. Hall Effect measurements indicated that undoped and Al doped ZnO thin films showed an n-type conductivity, whereas ZnO:Al–N and ZnO:Ag–N thin films exhibited p-type conductivity, probably related to the formation of dual acceptor complexes related to nitrogen. Two types of p–n homojunctions (ZnO:Al–N/ZnO:Al and ZnO:Ag–N/ZnO:Al) were fabricated by means of sol–gel spin-coating method. In both cases, a rectifying behavior was observed, as revealed by current–voltage measurements.