Atomic structure of MBE-grown GaAs nanowhiskers

被引：1
|
作者：
I. P. Soshnikov
G. É. Cirlin
A. A. Tonkikh
Yu. B. Samsonenko
V. G. Dubovskii
V. M. Ustinov
O. M. Gorbenko
D. Litvinov
D. Gerthsen
机构：
[1] Russian Academy of Sciences,St. Petersburg Physicotechnical Science & Education Center
[2] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[3] Russian Academy of Sciences,Institute of Analytical Instrument Making
[4] Technical University of Karlsruhe,undefined
来源：
Physics of the Solid State | 2005年 / 47卷
关键词：
Spectroscopy; State Physics; Hexagonal; GaAs; Structural Property;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The structural properties of MBE-grown GaAs and Al0.3Ga0.7 As nanowhiskers were studied. The formation of wurtzite and 4H-polytype hexagonal structures with characteristic sizes of 100 nm or larger in these materials was demonstrated. It is concluded that the Au-Ga activation alloy symmetry influences the formation of the hexagonal structure.
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页码：2213 / 2218
页数：5
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