Low-temperature photoluminescence and X-ray diffractometry study of InxGa1−xAs quantum wells

被引：0
|
作者：
S. V. Evstigneev
R. M. Imamov
A. A. Lomov
Yu. G. Sadof’ev
Yu. V. Khabarov
M. A. Chuev
D. S. Shipitsin
机构：
[1] Russian Academy of Sciences,Lebedev Institute of Physics
[2] Russian Academy of Sciences,Shubnikov Institute of Crystallography
[3] Russian Academy of Sciences,Institute of Radio Engineering and Electronics
[4] Russian Academy of Sciences,Institute of Physics and Technology
来源：
Semiconductors | 2000年 / 34卷
关键词：
Experimental Data; Recombination; GaAs; Magnetic Material; Electromagnetism;
D O I：
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中图分类号：
学科分类号：
摘要：
The structures grown by molecular-beam epitaxy with InxGa1−xAs quantum wells (QWs) in GaAs were studied by X-ray diffractometry and low-temperature photoluminescence techniques. The inhomogeneity of the QW composition along the growth direction was established. Energy positions of the exciton recombination lines in the QWs with step-graded In distribution were calculated, and good agreement with the experimental data was obtained.
引用
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页码：693 / 699
页数：6
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