The magnetic field effect on optical properties of Sm-doped GaN thin films

被引：0
|
作者：
Pan Sun
Yanchen Li
Xianquan Meng
Sheng Yu
Yihe Liu
Fengqi Liu
Zhanguo Wang
机构：
[1] Wuhan University,Key Laboratory of Artificial Micro
[2] Chinese Academy of Sciences,and Nano
[3] George Mason University,structures Ministry of Education and School of Physics and Technology
来源：
Journal of Materials Science: Materials in Electronics | 2014年 / 25卷
关键词：
External Magnetic Field; Sapphire Substrate; Ferromagnetic Behavior; Gallium Nitride; External Magnetic Field Strength;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report the optical and magnetic properties of Sm doped wide-band-gap Gallium nitride (GaN) prepared by ion implantation. The photoluminescence (PL) intensity obviously increased as the increasing of annealing temperature from 700 to 1,100 °C. Magnetic hysteresis was observed at room temperature. Our study was focusing on the influence of magnetic field on optical property of Sm3+ doped GaN. It was discovered that the PL intensity of Sm3+ increases remarkably under an external magnetic field. The mechanism of the magnetic ordering-modulated PL peak intensity of Sm3+ doped GaN films was discussed. This may open up a suite of potential applications in producing magneto-optical devices.
引用
收藏
页码：2974 / 2978
页数：4
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