Ni doping effect on electrical conductivity of ZnO nanocrystalline thin films

被引：0
|
作者：
A. Yildiz
B. Kayhan
B. Yurduguzel
A. P. Rambu
F. Iacomi
S. Simon
机构：
[1] Ahi Evran University,Department of Physics, Faculty of Science and Arts
[2] Ahi Evran University,Programme of Electronic Communication Technology, Kaman Technical Vocational School of Higher Education
[3] Alexandru Ioan Cuza University,Faculty of Physics
[4] Babes-Bolyai University,Faculty of Physics & Institute of Interdisciplinary Research in Bio
来源：
Journal of Materials Science: Materials in Electronics | 2011年 / 22卷
关键词：
Grain Boundary; Spin Coating Method; Shallow Donor Level; Electrical Conductivity Behavior; Binding Energy Position;
D O I：
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中图分类号：
学科分类号：
摘要：
The electrical conductivity behavior of undoped and Ni-doped ZnO nanocrystalline thin films prepared by spin-coating method was investigated as a function of temperature. The films were found to have polycrystalline structure. Grain size and the conductivity of the films were found to decrease significantly with increase in Ni concentration. This behavior was well explained by the grain boundary conduction model that takes into account electron trapping in surface states. It was observed that by increasing the Ni-doping level the surface trap density increases and implicitly the conductivity decreases.
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