Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

被引：0

作者：

Joost Romijn

Sten Vollebregt

Luke M. Middelburg

Brahim El Mansouri

Henk W. van Zeijl

Alexander May

Tobias Erlbacher

Johan Leijtens

Guoqi Zhang

Pasqualina M. Sarro

机构：

[1] Delft University of Technology,Laboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

[2] Fraunhofer Institute for Integrated Systems and Devices Technology IISB,undefined

[3] Lens R&D,undefined

来源：

Microsystems & Nanoengineering | / 8卷

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摘要：

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.

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