Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics

被引:0
|
作者
L. Ya. Karachinskii
A. M. Georgievskii
N. A. Pikhtin
S. V. Zaitsev
I. S. Tarasov
P. S. Kop’ev
机构
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源
Technical Physics Letters | 1999年 / 25卷
关键词
Active Region; Pulse Duration; Spectral Characteristic; Spatial Characteristic; Pump Pulse;
D O I
暂无
中图分类号
学科分类号
摘要
Spectral and spatial characteristics of the output of InGaAsP/InP separate-confinement double heterostructure laser are investigated. The measurements are performed in quasicontinuous and continuous pumping regimes at room temperature. These lasers are shown to be spatially single-mode over the entire working range of currents. The broadening of the longitudinal modes under quasicontinuous pumping is attributed to heating of the active region of the lasers. The pump pulse duration at which heating of the active region of the lasers can be neglected is estimated.
引用
收藏
页码:334 / 336
页数:2
相关论文
共 50 条
  • [41] High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers
    Wang Yang
    Qiu Ying-Ping
    Pan Jiao-Qing
    Zhao Ling-Juan
    Zhu Hong-Liang
    Wang Wei
    CHINESE PHYSICS LETTERS, 2010, 27 (11)
  • [42] FABRICATION AND CHARACTERISTICS OF ION-BEAM ETCHED CAVITY INP/INGAASP BH LASERS
    BOUADMA, N
    HOGREL, JF
    CHARIL, J
    CARRE, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 909 - 914
  • [43] THEORETICAL AND EXPERIMENTAL-STUDY OF THRESHOLD CHARACTERISTICS IN INGAASP-INP DH LASERS
    YANO, M
    NISHI, H
    TAKUSAGAWA, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) : 571 - 579
  • [44] OSCILLATION CHARACTERISTICS IN INGAASP-INP DH LASERS WITH SELF-ALIGNED STRUCTURE
    YANO, M
    NISHI, H
    TAKUSAGAWA, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (12) : 1388 - 1395
  • [45] TEMPERATURE-DEPENDENCE OF THRESHOLD AND ELECTRICAL CHARACTERISTICS OF INGAASP-INP DH LASERS
    DUTTA, NK
    NELSON, RJ
    BARNES, PA
    ELECTRONICS LETTERS, 1980, 16 (17) : 653 - 654
  • [46] TEMPERATURE CHARACTERISTICS OF THRESHOLD CURRENT IN INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS
    YANO, M
    NISHI, H
    TAKUSAGAWA, M
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4022 - 4028
  • [47] FEATURES OF THE SPECTRAL CHARACTERISTICS OF HIGH-POWER INJECTION HETEROSTRUCTURE LASERS BASED ON INGAASP QUATERNARY SOLID-SOLUTIONS
    PIKHTIN, NA
    TARASOV, IS
    IVANOV, MA
    SEMICONDUCTORS, 1994, 28 (11) : 1094 - 1097
  • [48] CHARACTERISTICS OF OBLITERATION OF WAVE-GUIDE PROFILE SURFACE IN INGAASP/INP ROS LASERS
    GURIEV, AI
    DERYAGIN, AG
    KIZHAEV, KY
    KUKSENKOV, DV
    KUCHINSKII, VI
    NIKISHIN, SA
    PORTNOI, EL
    SMIRNITSKII, VB
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (08): : 5 - 9
  • [49] Nanopatterned Quantum Dot Active Region Lasers on InP substrates
    Mawst, L. J.
    Park, J. H.
    Huang, Y.
    Kirch, J.
    Sin, Y.
    Foran, B.
    Liu, C. -C.
    Nealey, P. F.
    Kuech, T. F.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS X, 2011, 7953
  • [50] Influence of fabrication inhomogeneities on the characteristics of InGaAsP/InP directional coupler filters
    Forschungs- und Technologiezentrum, Darmstadt, Darmstadt, Germany
    J Opt Commun, 1 (2-5):