Enhanced Photoelectric Properties of n-ZnO NWs/p-Si Heterojunction LEDs by Inserting an Insulating MgO Layer Using Sol–Gel Method

被引：0
|
作者：
Juan Yao
Guotao Lin
Zhenxi Du
Jun Liang
Huan He
Xiaoming Shen
Yuechun Fu
机构：
[1] Guangxi University,Center of Ecological Collaborative Innovation for Aluminum Industry in Guangxi, Guangxi Key Laboratory of Processing for Non
来源：
Electronic Materials Letters | 2021年 / 17卷
关键词：
Insulating MgO layer; Sol–gel method; ZnO NWs; Photoelectric properties;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：355 / 361
页数：6
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