Structural and optical properties of InGaN/GaN triangular-shape quantum wells with different threading dislocation densities

被引：0

作者：

Rak Jun Choi

Hyung Jae Lee

Yoon-Bong Hahn

Hyung Koun Cho

机构：

[1] Chonbuk National University,School of Chemical Engineering and Technology and Semiconductor Physics Research Center

[2] Dong-A University,Department of Metallurgical Engineering

来源：

Korean Journal of Chemical Engineering | 2004年 / 21卷

关键词：

InGaN/GaN; Multiple Quantum Wells; Light-emitting Diodes; Threading Dislocation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Structural and optical properties of InGaN/GaN multiple triangular quantum well (QW) structures with different threading dislocation (TD) densities of 1.5×108 (sample A) and 4.5×108 cm-2 (sample B) have been studied. High resolution transmission electron microscopy and x-ray diffraction analysis showed more fluctuation of local In composition in the sample B, which was attributed to the stress field created by the dislocations as it provides a driving force for the migration of In atoms towards dislocations. Severe degradation of photoluminescence intensity of the sample B was also observed at < 50 K. The optical and structural properties of the InGaN/GaN triangular QW structures are overall substantially affected by the TD density.

引用

页码：292 / 295

页数：3

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