1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them

被引：0
|
作者：
A. V. Sakharov
I. L. Krestnikov
N. A. Maleev
A. R. Kovsh
A. E. Zhukov
A. F. Tsatsul’nikov
V. M. Ustinov
N. N. Ledentsov
D. Bimberg
J. A. Lott
Zh. I. Alferov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] Technische Universität Berlin,Institut für Festkörperphysik
[3] Air Force Institute of Technology,Department of Electrical and Computer Engineering
来源：
Semiconductors | 2001年 / 35卷
关键词：
GaAs; Spectral Range; Magnetic Material; Spectral Characteristic; Active Layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Various structures with optical microcavities and active layers based on InGaAs/GaAs quantum dots MBE-grown on GaAs substrates were studied theoretically and experimentally. LEDs for the 1.3 µm spectral range with narrow spectral characteristics and low light beam divergence were fabricated. Vertical lasing at 1.3 µm was obtained in a structure with oxidized AlO/GaAs mirrors under injection pumping.
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页码：854 / 859
页数：5
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